6", 8" & 12" SiC Wafers
Featuring ultra-low micropipe densities of <0.5 cm⁻². High-purity semi-insulating and n-type substrates are engineered for high-voltage power electronics and RF applications.
Lattice purity by design.
Our silicon carbide substrates offer high thermal conductivity, excellent electrical breakdown strength, and superior crystal quality. Every wafer is verified through comprehensive cleanroom inspection to ensure consistent performance and compliance with industry standards.
Resistivity (n-type)
Micropipe density
Lattice Structure
<0.5 cm⁻²
4H-SiC
0.015–0.030 Ω·cm
Secure your substrate supply chain.
Partner with MY Global Nexus for reliable volume supply of high-purity Silicon Carbide substrates.